NTH4L025N065SC1

NTH4L025N065SC1

零件编号: NTH4L025N065SC1
产品分类: 固态继电器(SSR)
制造商: ADDA USA
描述: SILICON CARBIDE (SIC) MOSFET - 1
包装: -
ROHS状态: No
货币: USD
PDF: 资料
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id
4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs
164 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
3480 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
348W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L

规格