YJG40NP03A

● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)

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    SPECIFICATION

    NMOS(Die1)
    ● VDS 30V
    ● ID 40A
    ● RDS(ON)( at VGS=10V) <10 mohm
    ● RDS(ON)( at VGS=4.5V) <14 mohm
    PMOS(Die2)
    ●VDS -30V
    ● ID – 40A
    ● RDS(ON)( at VGS=-10V) <17mohm
    ● RDS(ON)( at VGS=-4.5V) <27mohm