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● Trench Power LV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON)
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NMOS(Die1) ● VDS 30V ● ID 40A ● RDS(ON)( at VGS=10V) <10 mohm ● RDS(ON)( at VGS=4.5V) <14 mohm PMOS(Die2) ●VDS -30V ● ID – 40A ● RDS(ON)( at VGS=-10V) <17mohm ● RDS(ON)( at VGS=-4.5V) <27mohm