TLP291(GB-TP,SE(T

TLP291(SE consists of photo transistor optically coupled to an infrared emitting diode.
TLP291(SE is housed in the SO4 package, very small and thin coupler.
Since TLP291(SE is guaranteed wide operating temperature (T
a = -55 to
110
) and high isolation voltage (3750 Vrms), it’s suitable for high-density
surface mounting applications such as small switching power supplies and
programmable controllers.

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    SPECIFICATION

    (1) Collector-emitter voltage: 80 V (min)
    (2) Current transfer ratio: 50 % (min)
    GB Rank: 100 % (min)
    (3) Isolation voltage: 3750 Vrms (min)
    (4) Operating temperature: -55 to 110

    (5) Safety standards
    UL-recognized: UL 1577, File No.E67349
    cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
    VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
    CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory