STP4N150

These Power MOSFETs are designed using the STMicroelectronics consolidated
strip-layout-based MESH OVERLAY process. The result is a product that matches or
improves on the performance of comparable standard parts from other
manufacturers.

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    SPECIFICATION

    • 100% avalanche tested
    • Intrinsic capacitances and Qg minimized
    • High speed switching
    • Fully isolated TO-3PF plastic package