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(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 m Ω (max) (@VGS = 4.5 V) RDS(ON) = 72 m Ω (max) (@VGS = 2.5 V) RDS(ON) = 109 m Ω (max) (@VGS = 1.8 V)
