SSM3J332R,LF(T

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    SPECIFICATION

    Mfr Toshiba Semiconductor and Storage
    Series U-MOSVI
    Packaging Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status Active
    FET Type P-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 30 V
    Current – Continuous Drain (Id) @ 25°C 6A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V
    Rds On (Max) @ Id, Vgs 42mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id 1.2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 4.5 V
    Vgs (Max) ±12V
    Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V
    FET Feature
    Power Dissipation (Max) 1W (Ta)
    Operating Temperature 150°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package SOT-23F
    Package / Case SOT-23-3 Flat Leads
    Base Product Number SSM3J332