SQ2310ES-T1_GE3

MOSFET N-CH 20V 6A TO236

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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    Vishay Siliconix
    Series
    TrenchFET®
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Obsolete
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    20 V
    Current – Continuous Drain (Id) @ 25°C
    6A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
    Rds On (Max) @ Id, Vgs
    30mOhm @ 5A, 4.5V
    Vgs(th) (Max) @ Id
    1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    8.5 nC @ 4.5 V
    Vgs (Max)
    ±8V
    Input Capacitance (Ciss) (Max) @ Vds
    485 pF @ 10 V
    FET Feature
    Power Dissipation (Max)
    2W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Surface Mount
    Supplier Device Package
    SOT-23-3 (TO-236)
    Package / Case
    TO-236-3, SC-59, SOT-23-3
    Base Product Number
    SQ2310