SCTH100N65G2-7AG

SICFET N-CH 650V 95A H2PAK-7

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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    STMicroelectronics
    Series
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Active
    FET Type
    N-Channel
    Technology
    SiCFET (Silicon Carbide)
    Drain to Source Voltage (Vdss)
    650 V
    Current – Continuous Drain (Id) @ 25°C
    95A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)
    18V
    Rds On (Max) @ Id, Vgs
    26mOhm @ 50A, 18V
    Vgs(th) (Max) @ Id
    5V @ 5mA
    Gate Charge (Qg) (Max) @ Vgs
    162 nC @ 18 V
    Vgs (Max)
    +22V, -10V
    Input Capacitance (Ciss) (Max) @ Vds
    3315 pF @ 520 V
    FET Feature
    Power Dissipation (Max)
    360W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Grade
    Automotive
    Qualification
    AEC-Q101
    Mounting Type
    Surface Mount
    Supplier Device Package
    H2PAK-7
    Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
    Base Product Number
    SCTH100