PSMN2R5-30YL,115

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.

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In stock will ship in 2 days. Real-time inventory pls confirm with us.

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    SPECIFICATION

     High efficiency due to low switching
    and conduction losses
     Suitable for logic level gate drive
    sources