NDS331N

These N−Channel logic level enhancement mode power field effect
transistors are produced using ON Semiconductor’s proprietary, high
cell density, DMOS technology. This very high density process is
especially tailored to minimize on−state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMCIA cards, and other battery
powered circuits where fast switching, and low in−line power loss are
needed in a very small outline surface mount package.

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    SPECIFICATION

    • 1.3 A, 20 V
    ♦ RDS(on) = 0.21 @ VGS = 2.7 V
    ♦ RDS(on) = 0.16 @ VGS = 4.5 V
    • Industry Standard Outline SOT−23 Surface Mount Package Using
    Proprietary SUPERSOT−3 Design for Superior Thermal and
    Electrical Capabilities
    • High Density Cell Design for Extremely Low RDS(on)
    • Exceptional On−Resistance and Maximum DC Current Capability
    • This is a Pb−Free Device