N25Q064A13E1240F

FLASH – NOR Memory IC 64Mbit SPI 108 MHz 24-T-PBGA (6×8)

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    SPECIFICATION

    Mfr Infineon Technologies
    Series CoolMOS™ P7
    Packaging Tube
    Part Status Active
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 800 V
    Current – Continuous Drain (Id) @ 25°C 6A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
    Vgs(th) (Max) @ Id 3.5V @ 110µA
    Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
    FET Feature
    Power Dissipation (Max) 26W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Supplier Device Package PG-TO220-3-31
    Package / Case TO-220-3 Full Pack
    Base Product Number IPA80R900