• 1Gb SLC NAND Flash
– Bus: x4
– Page size: (2048+64) byte
– Block size: (128K+4K) byte
• Fast Read Access
– Supports Random data read out by x1 x2 &
x4 modes, (1-1-1,1-1-2, 1-1-4)Note 2
– Latency of array to register: 25usNote1
– Frequency: 104MHz
• Page Program Operation
– Page program time: 300us (typ)Note1
• Block Erase Operation
– Block erase time: 1ms (typ.)
• Single Voltage Operation:
– VCC: 2.7 to 3.6V
• BP bits for block group protection
• Low Power Dissipation
– Max 30mA
Active current (Read/Program/Erase)
• Sleep Mode
– 50uA (Max) standby current
• High Reliability
– Program / Erase Endurance: Typical 100K cycles
(with internal 4-bit ECC per (512+16) Byte
– Data Retention: 10 years
• Wide Temperature Operating Range
-40°C to +85°C
• Package:
8-WSON (8x6mm)
All packaged devices are RoHS Compliant and
Halogen-free.
Note 1. Please refer to the tRD_ECC and
tPROG_ECC specifications if internal ECC
function is turned on.
Note 2. Which indicates the number of I/O for
command, address and data.