MBRA340T3G

Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.

Categories: Diodes, Transistors and Thyristors, Rectifiers

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SPECIFICATION

• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant