MB85RS64PNF-G-JNERE1

MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8
bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
MB85RS64 adopts the Serial Peripheral Interface (SPI).
The MB85RS64 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS64 can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS64 does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS64 takes
no wait time.

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    SPECIFICATION

    • Bit configuration : 8,192 words  8 bits
    • Serial Peripheral Interface : SPI (Serial Peripheral Interface)
    Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
    • Operating frequency : 20 MHz (Max)
    • High endurance : 10 Billion Read/writes
    • Data retention : 10 years (+85 C)
    • Operating power supply voltage : 2.7 V to 3.6 V
    • Low power consumption : Operating power supply current 1.5(TBD)mA (Typ@20 MHz)
    Standby current 10 A(TBD) (Typ)
    • Operation ambient temperature range :  40 C to +85 C
    • Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant