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    IRFB4332PBF

    This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
    Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
    area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high
    repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
    device for PDP driving applications.

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      SPECIFICATION

       Advanced Process Technology
       Key Parameters Optimized for PDP Sustain, Energy
      Recovery and Pass Switch Applications
       Low EPULSE Rating to Reduce Power Dissipation in PDP
      Sustain, Energy Recovery and Pass Switch Applications
       Low QG for Fast Response
       High Repetitive Peak Current Capability for Reliable
      Operation
       Short Fall & Rise Times for Fast Switching
       175°C Operating Junction Temperature for Improved
      Ruggedness
       Repetitive Avalanche Capability for Robustness and
      Reliability