HMC903LP3ETR

The HMC903LP3E is a self biased, gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), pseudomorphic
(pHEMT), low noise amplifier (LNA) with an option bias control
for IDQ reduction. It is housed in a 16-lead, 3 mm × 3 mm, LFCSP
package. The HMC903LP3E amplifier operates from 6 GHz to
17 GHz, providing 18.5 dB of small signal gain and 1.7 dB noise
figure in the 6 GHz to 16 GHz band, and an output IP3 of 25 dBm
full band 6 GHz to 17 GHz, while requiring only 80 mA from a
3.5 V supply.
The P1dB output power of 14.5 dBm enables the LNA to function
as a local oscillator (LO) driver for balanced, I/Q or image reject
mixers. The HMC903LP3E also features an input and an output
that are dc blocked and internally matched to 50 Ω, making it
ideal for high capacity microwave radios and video satellite
(VSAT) applications.


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    SPECIFICATION

    Low noise figure: 1.7 dB typical at 6 GHz to 16 GHz
    High gain: 18.5 dB typical at 6 GHz to 16 GHz
    Output power for 1 dB compression (P1dB): 14.5 dBm typical
    at 6 GHz to 16 GHz
    Single-supply voltage: 3.5 V at 80 mA typical
    Output third-order intercept (IP3): 25 dBm typical
    50 Ω matched input/output
    Self biased with optional bias control for IDQ reduction
    16-lead, 3 mm × 3 mm, LFCSP package