FQP17N40

This N−Channel Enhancement Mode Power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially tailored to reduce
on−state resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction (PFC),
and electronic lamp ballasts.

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    SPECIFICATION

    16 A, 400 V RDS(on) = 270 m (Max.) @ VGS = 10 V, ID = 8.0 A
    • Low Gate Charge (Typ. 45 nC)
    • Low Crss (Typ. 30 pF)
    • 100% Avalanche Tested
    • This Device is Pb−Free