FQA6N90C-F109

MOSFET N-CH 900V 6A TO3PN

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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    onsemi
    Series
    QFET®
    Packaging
    Tube
    Part Status
    Obsolete
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    900 V
    Current – Continuous Drain (Id) @ 25°C
    6A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    2.3Ohm @ 3A, 10V
    Vgs(th) (Max) @ Id
    5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    40 nC @ 10 V
    Vgs (Max)
    ±30V
    Input Capacitance (Ciss) (Max) @ Vds
    1770 pF @ 25 V
    FET Feature
    Power Dissipation (Max)
    198W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Through Hole
    Supplier Device Package
    TO-3PN
    Package / Case
    TO-3P-3, SC-65-3
    Base Product Number
    FQA6