FQA6N90C-F109

This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.

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    SPECIFICATION

    • 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A
    • Low Gate Charge (Typ. 30 nC)
    • Low Crss (Typ. 11 pF)
    • 100% Avalanche Tested
    • RoHS Compliant