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    FDPC5030SG

    This device includes two specialized N-Channel MOSFETs in
    a dual package. The switch node has been internally connected to
    enable easy placement and routing of synchronous buck converters.
    The control MOSFET (Q1) and synchronous SyncFET (Q2) have
    been designed to provide optimal power efficiency.

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      SPECIFICATION

      Q1: N-Channel
       Max RDS(on) = 5.0 m at VGS = 10 V, ID = 17 A
       Max RDS(on) = 6.5 m at VGS = 4.5 V, ID = 14 A
      Q2: N-Channel
       Max RDS(on) = 2.4 m at VGS = 10 V, ID = 25 A
       Max RDS(on) = 3.0 m at VGS = 4.5 V, ID = 22 A
       Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
      Lower Switching Losses.
       MOSFET Integration Enables Optimum Layout for Lower Circuit
      Inductance and Reduced Switch Node Ringing.
       RoHS Compliant