FDMS86163P

This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.

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    SPECIFICATION

    • Max rDS(on) = 22 m at VGS = −10 V, ID = −7.9 A
    • Max rDS(on) = 30 m at VGS = −6 V, ID = −5.9 A
    • Very Low RDS−on Mid Voltage P−Channel Silicon Technology
    Optimised for Low Qg
    • This Product is Optimised for Fast Switching Applications
    As Well As Load Switch Applications
    • 100% UIL Tested
    • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
    Compliant