FDD5614P

This 60 V P−Channel MOSFET uses onsemi’s high voltage
POWERTRENCH process. It has been optimized for power
management applications.

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    SPECIFICATION

    • −15 A, −60 V
    ♦ RDS(ON) = 100 m at VGS = −10 V
    ♦ RDS(ON) = 130 m at VGS = −4.5 V
    • Fast Switching Speed
    • High Performance Trench Technology for Extremely Low RDS(ON)
    • High Power and Current Handling Capability
    • This is a Pb−Free Device