CSD19538Q2

MOSFET N-CH 100V 14.4A 6WSON

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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    Texas Instruments
    Series
    NexFET™
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Active
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    100 V
    Current – Continuous Drain (Id) @ 25°C
    14.4A (Ta)
    Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
    Rds On (Max) @ Id, Vgs
    59mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id
    3.8V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    5.6 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    454 pF @ 50 V
    FET Feature
    Power Dissipation (Max)
    2.5W (Ta), 20.2W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Surface Mount
    Supplier Device Package
    6-WSON (2×2)
    Package / Case
    6-WDFN Exposed Pad
    Base Product Number
    CSD19538