CSD13306WT

MOSFET N-CH 12V 3.5A 6DSBGA


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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single
    Mfr
    Texas Instruments
    Series
    NexFET™
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Active
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    12 V
    Current – Continuous Drain (Id) @ 25°C
    3.5A (Ta)
    Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
    Rds On (Max) @ Id, Vgs
    10.2mOhm @ 1.5A, 4.5V
    Vgs(th) (Max) @ Id
    1.3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    11.2 nC @ 4.5 V
    Vgs (Max)
    ±10V
    Input Capacitance (Ciss) (Max) @ Vds
    1370 pF @ 6 V
    FET Feature
    Power Dissipation (Max)
    1.9W (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Surface Mount
    Supplier Device Package
    6-DSBGA (1×1.5)
    Package / Case
    6-UFBGA, DSBGA
    Base Product Number
    CSD13306