BSS123-7-F

These N-Channel enhancement mode field effect transistors are
produced using Diodes Incorporated’s proprietary, high density and
advanced trench technology. These products have been designed to
minimize on-state resistance while providing rugged, reliable and fast
switching performance. These products are particularly suited for lowvoltage, low-current applications such as:
• Small servo motor controls
• Power MOSFET gate drivers
• Switching applications

Category: MOSFETs

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In stock will ship in 2 days. Real-time inventory pls confirm with us.

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SPECIFICATION

• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
• An automotive-compliant part is available under separate
datasheet (BSS123Q)