BSP300H6327

MOSFET N-CH 800V 190MA SOT223-4

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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    Infineon Technologies
    Series
    SIPMOS®
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Obsolete
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    800 V
    Current – Continuous Drain (Id) @ 25°C
    190mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    20Ohm @ 190mA, 10V
    Vgs(th) (Max) @ Id
    4V @ 1mA
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    230 pF @ 25 V
    FET Feature
    Power Dissipation (Max)
    1.8W (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Surface Mount
    Supplier Device Package
    PG-SOT223-4
    Package / Case
    TO-261-4, TO-261AA