BLF645,112

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.

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    SPECIFICATION

    CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
    drain current IDq = 0.9 A for total device:
     Average output power = 100 W
     Power gain = 18 dB
     Drain efficiency = 56 %
     2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
    drain current IDq = 0.9 A for total device:
     Peak envelope load power = 100 W
     Power gain = 18 dB
     Drain efficiency = 45 %
     Intermodulation distortion = 32 dBc
     Integrated ESD protection
     Excellent ruggedness
     High power gain
     High efficiency
     Excellent reliability
     Easy power control
     Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
    (RoHS)