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    AT25SF161B-SSHB-T

    The AT25SF161B is a Serial Peripheral Interface (SPI) Flash memory device designed for use in a wide variety of
    high-volume industrial, consumer and connected applications.
    It can be used for storing program memory that is booted from Flash memory into embedded or external RAM; it
    can also be used for directly executing the program code from the Flash memory (execute in place [XiP]).
    XiP is specifically supported by features which enhance read speed:
    ▪ Quad-SPI, which allows reading four bits in one clock cycle.
    ▪ Continuous read mode (0-4-4 command format), which removes the need to send a command opcode.
    ▪ High SPI clock frequency.
    These features allow fast response from the Flash memory whenever the host must fetch commands or data from
    it.

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      SPECIFICATION

      ▪ Two supply voltage options:
      • 2.7 V – 3.6 V
      • 2.5 V – 3.6 V
      ▪ Serial Peripheral Interface (SPI) Compatible
      • Supports SPI modes 0 and 3
      • Supports dual output operations (1,1,2)
      • Supports quad output operations (1-1-4)
      • Supports quad I/O / XiP operations (1-4-4, 0-4-4)
      ▪ 108 MHz maximum operating frequency
      ▪ Read operations
      • Fast read up to 108 MHz
      • Continuous read (with 8/16/32/64-byte wrap)
      ▪ Flexible erase architecture and time
      • Sector erase 4 kB: 50 ms (typical)
      • Block erase 32 kB and 64 kB: 120 ms and
      200 ms (typical)
      • Full chip erase: 5.5 seconds (typical)
      ▪ Flexible programming and time
      • Page/byte program: from 1 to 256 bytes
      • Page program time: 0.4 ms (typical)
      ▪ Erase program suspend resume
      ▪ JEDEC Standard Manufacturer and Device ID
      ▪ Memory protection support
      • User-definable protected area at start or end of
      memory array
      • Enable/disable protection with WP pin
      ▪ 3 x 256-byte One-Time Programmable (OTP)
      security registers
      ▪ Serial Flash Discoverable Parameters (SFDP)
      register
      ▪ Low power dissipation
      • Standby current : 15 µA (maximum)
      • Deep power-down current: 1.5 µA (maximum)
      ▪ Endurance: 100,000 Program and Erase Cycles
      ▪ Data retention: 20 Years
      ▪ Temperature range (-40 oC to 85 oC)
      ▪ Industry standard green (Pb/Halide-free/RoHS
      compliant) package options
      • 8-lead SOIC (0.150” Narrow and 0.208” Wide)
      • 8-pad Ultra-Thin DFN (5 x 6 x 0.6 mm)
      • 8-ball WLCSP (3 x 2 x 3 grid array)
      • Die Wafer Form