ADL8105ACPZN-R7

The ADL8105 is a gallium arsenide (GaAs), monolithic microwave
integrated circuit (MMIC), pseudomorphic high electron mobility
transistor (pHEMT), low noise wideband amplifier that operates
from 5 GHz to 20 GHz.
The ADL8105 provides a typical gain of 27 dB at 12 GHz to 17
GHz, a 1.8 dB typical noise figure from 12 GHz to 17 GHz, a
typical output third-order intercept (OIP3) of 30.5 dBm at 12 GHz
to 17 GHz, and a saturated output power (PSAT) of up to 20.5
dBm, requiring only 90 mA from a 5 V supply voltage. The power
dissipation can be lowered at the expense of OIP3 and output
power (POUT). The ADL8105 also features inputs and outputs that
are internally matched to 50 Ω. The RFIN and RFOUT pins are
internally ac-coupled, and the bias inductor is also integrated,
making it ideal for surface-mounted technology (SMT)-based, high
capacity microwave radio applications.
The ADL8105 is housed in an RoHS-compliant, 2 mm × 2 mm,
8-lead LFCSP package.