2SC2655-Y(TE6,F,M)
INQUIRY ONLINE
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Category
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Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single Bipolar Transistors
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Mfr
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Toshiba Semiconductor and Storage
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Series
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–
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Packaging
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Bulk
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Part Status
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Obsolete
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Transistor Type
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NPN
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Current – Collector (Ic) (Max)
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2 A
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Voltage – Collector Emitter Breakdown (Max)
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50 V
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Vce Saturation (Max) @ Ib, Ic
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500mV @ 50mA, 1A
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Current – Collector Cutoff (Max)
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1µA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce
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70 @ 500mA, 2V
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Power – Max
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900 mW
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Frequency – Transition
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100MHz
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Operating Temperature
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150°C (TJ)
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Mounting Type
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Through Hole
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Package / Case
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TO-226-3, TO-92-3 Long Body
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Supplier Device Package
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TO-92MOD
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Base Product Number
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2SC2655
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