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Bipolar (BJT) Transistor NPN 50 V 2 A 100MHz 900 mW Through Hole TO-92MOD
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• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1020.