K4U6E3S4AA-MGCL
Samsung Electronics
DRAM Chip Mobile LPDDR4X SDRAM 16Gbit 512Mx32 0.6V/1.1V/1.8V 200-Pin FBGA
RFQ
K4U6E3S4AA-MGCL
Samsung
16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production
RFQ
KLM8G1GETF-B041
Samsung
2007301503_Samsung-KLM8G1GETF-B041_C499918
MLC NAND Flash Serial e-MMC 3V/3.3V 64G-bit 64G/16G/8G x 1/4-bit/8-bit 153-Pin FBGA
RFQ
M24256-BRMN6TP
STMicroelectronics
en.CD00001891
EEPROM Memory IC 256Kbit I2C 1 MHz 450 ns 8-SOIC
RFQ