STH3N150-2

These Power MOSFETs are designed using the STMicroelectronics consolidated
strip-layout-based MESH OVERLAY process. The result is a product that matches or
improves on the performance of comparable standard parts from other
manufacturers.

Category: MOSFETs

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SPECIFICATION

Order codes VDS RDS(on) max. ID PTOT
STFW3N150 1500 V 9 Ω 2.5 A 63 W

STH3N150-2
STP3N150 140 W
STW3N150
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)