STD44N4LF6

This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.

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    SPECIFICATION

    Mfr STMicroelectronics
    Series DeepGATE™, STripFET™ VI
    Packaging Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status Active
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 40 V
    Current – Continuous Drain (Id) @ 25°C 44A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
    Rds On (Max) @ Id, Vgs 12.5mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V
    FET Feature
    Power Dissipation (Max) 50W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package DPAK
    Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
    Base Product Number STD44