RT9611AGQW

The RT9611A/B is a high frequency, synchronous rectified,
single phase dual MOSFET driver designed to adapt from
normal MOSFET driving applications to high performance
CPU VR driving capabilities.
The RT9611A/B can be utilized under both VCC = 5V or
VCC = 12V applications. The RT9611A/B also builds in an
internal power switch to replace external boot strap diode.
The RT9611A/B can support switching frequency efficiently
up to 500kHz. The RT9611A/B has the UGATE driving
circuit and the LGATE driving circuit for synchronous
rectified DC/DC converter applications. The driving rise/
fall time capability is designed within 30ns and the shoot
through protection mechanism is designed to prevent shoot
through of high side and low side power MOSFETs. The
RT9611A/B has PWM tri-state shut down and OD input
shut down functions which can force driver output into
high impedance.
The difference of the RT9611A and the RT9611B is the
propagation delay, tUGATEpdh. The RT9611B has
comparatively large tUGATEpdh than RT9611B. Hence, the
RT9611A is usually recommended to be utilized in
performance oriented applications, such as high power
density CPU VR or GPU VR.
The RT9611A/B comes in a small footprint with 8-pin
packages. The choice of packages type includes SOP-8,
SOP-8 (Exposed Pad) and WDFN-8EL 3×3.