FQPF27P06

Description
This P−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on−state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, audio
amplifier, DC motor control, and variable switching power
applications.

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    SPECIFICATION

    • −17 A, −60 V, RDS(on) = 70 m (Max.) @ VGS = −10 V, ID = −8.5 A
    • Low Gate Charge (Typ. 33 nC)
    • Low Crss (Typ. 120 pF)
    • 100% Avalanche Tested
    • 175°C Maximum Junction Temperature Rating