IRF100P218AKMA1
INQUIRY ONLINE
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Category
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Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Mfr
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Infineon Technologies
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Series
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StrongIRFET™
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Packaging
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Tube
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current – Continuous Drain (Id) @ 25°C
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209A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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6V, 10V
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Rds On (Max) @ Id, Vgs
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1.28mOhm @ 100A, 10V
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Vgs(th) (Max) @ Id
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3.8V @ 278µA
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Gate Charge (Qg) (Max) @ Vgs
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412 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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24000 pF @ 50 V
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FET Feature
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–
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Power Dissipation (Max)
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3.8W (Ta), 556W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Grade
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–
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Qualification
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–
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Mounting Type
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Through Hole
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Supplier Device Package
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PG-TO247-3
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Package / Case
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TO-247-3
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