SCTH100N65G2-7AG

This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.

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    SPECIFICATION

    Mfr STMicroelectronics
    Series
    Packaging Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status Active
    FET Type N-Channel
    Technology SiCFET (Silicon Carbide)
    Drain to Source Voltage (Vdss) 650 V
    Current – Continuous Drain (Id) @ 25°C 95A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 18V
    Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
    Vgs(th) (Max) @ Id 5V @ 5mA
    Gate Charge (Qg) (Max) @ Vgs 162 nC @ 18 V
    Vgs (Max) +22V, -10V
    Input Capacitance (Ciss) (Max) @ Vds 3315 pF @ 520 V
    FET Feature
    Power Dissipation (Max) 360W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Grade Automotive
    Qualification AEC-Q101
    Mounting Type Surface Mount
    Supplier Device Package H2PAK-7
    Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
    Base Product Number SCTH100