AUIRF7342QTR

Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.

Category: MOSFETs

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SPECIFICATION

 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dual P Channel MOSFET
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Lead-Free, RoHS Compliant
 Automotive Qualified