• pic_02

    Cart
  • pic_02

    Login

    FDMC2514SDC

    This N-Channel MOSFET is produced using ON
    Semiconductor’s advanced PowerTrench® process.
    Advancements in both silicon and Dual CoolTM package
    technologies have been combined to offer the lowest rDS(on)
    while maintaining excellent switching performance by extremely
    low Junction-to-Ambient thermal resistance. This device has the
    added benefit of an efficient monolithic Schottky body diode.

    Category:

    Download Details PDF
    Notice:

    In stock will ship in 2 days. Real-time inventory pls confirm with us.

    INQUIRY ONLINE




      SPECIFICATION

      „ Dual CoolTM Top Side Cooling PQFN package
      „ Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A
      „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
      „ High performance technology for extremely low rDS(on)
      „ SyncFET Schottky Body Diode
      „ RoHS Compliant