PSMN4R8-100BSEJ

MOSFET N-CH 100V 120A D2PAK

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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    Nexperia USA Inc.
    Series
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Active
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    100 V
    Current – Continuous Drain (Id) @ 25°C
    120A (Tj)
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    4.8mOhm @ 25A, 10V
    Vgs(th) (Max) @ Id
    4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs
    278 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    14400 pF @ 50 V
    FET Feature
    Power Dissipation (Max)
    405W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Surface Mount
    Supplier Device Package
    D2PAK
    Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
    Base Product Number
    PSMN4R8