IRF1310NSTRLPBF
INQUIRY ONLINE
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Category
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Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Mfr
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Infineon Technologies
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Series
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HEXFET®
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Packaging
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Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current – Continuous Drain (Id) @ 25°C
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42A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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36mOhm @ 22A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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110 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1900 pF @ 25 V
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FET Feature
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–
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Power Dissipation (Max)
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3.8W (Ta), 160W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D2PAK
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Package / Case
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TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Base Product Number
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IRF1310
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