SI4435DDY-T1-GE3
INQUIRY ONLINE
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Category
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Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single
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Mfr
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Vishay Siliconix
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Series
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TrenchFET®
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Packaging
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Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
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Part Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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30 V
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Current – Continuous Drain (Id) @ 25°C
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11.4A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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24mOhm @ 9.1A, 10V
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Vgs(th) (Max) @ Id
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3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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50 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1350 pF @ 15 V
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FET Feature
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–
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Power Dissipation (Max)
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2.5W (Ta), 5W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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8-SOIC
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Package / Case
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8-SOIC (0.154″, 3.90mm Width)
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Base Product Number
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SI4435
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