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    SST25VF016B-50-4I-S2AF

    The 25 series Serial Flash family features a four-wire,
    SPI-compatible interface that allows for a low pin-count
    package which occupies less board space and ultimately lowers total system costs. The SST25VF016B
    devices are enhanced with improved operating frequency and even lower power consumption than the
    original SST25VFxxxA devices. SST25VF016B SPI
    serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling
    injector attain better reliability and manufacturability
    compared with alternate approaches.
    SST25VF016B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single
    power supply of 2.7-3.6V for SST25VF016B. The total
    energy consumed is a function of the applied voltage,
    current, and time of application. Since for any given
    voltage range, the SuperFlash technology uses less
    current to program and has a shorter erase time, the
    total energy consumed during any Erase or Program
    operation is less than alternative flash memory technologies.
    The SST25VF016B device is offered in both 8-lead
    SOIC (200 mils) and 8-contact WSON (6mm x 5mm)
    packages. See Figure 2-1 for pin assignments.

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      SPECIFICATION

      • Single Voltage Read and Write Operations
      – 2.7-3.6V
      • Serial Interface Architecture
      – SPI Compatible: Mode 0 and Mode 3
      • High Speed Clock Frequency
      – Up to 50 MHz
      • Superior Reliability
      – Endurance: 100,000 Cycles (typical)
      – Greater than 100 years Data Retention
      • Low Power Consumption:
      – Active Read Current: 10 mA (typical)
      – Standby Current: 5 µA (typical)
      • Flexible Erase Capability
      – Uniform 4 KByte sectors
      – Uniform 32 KByte overlay blocks
      – Uniform 64 KByte overlay blocks
      • Fast Erase and Byte-Program:
      – Chip-Erase Time: 35 ms (typical)
      – Sector-/Block-Erase Time: 18 ms (typical)
      – Byte-Program Time: 7 µs (typical)
      • Auto Address Increment (AAI) Programming
      – Decrease total chip programming time over
      Byte-Program operations
      • End-of-Write Detection
      – Software polling the BUSY bit in Status Register
      – Busy Status readout on SO pin in AAI Mode
      • Hold Pin (HOLD#)
      – Suspends a serial sequence to the memory
      without deselecting the device
      • Write Protection (WP#)
      – Enables/Disables the Lock-Down function of the
      status register
      • Software Write Protection
      – Write protection through Block-Protection bits in
      status register
      • Temperature Range
      – Commercial: 0°C to +70°C
      – Industrial: -40°C to +85°C
      • Packages Available
      – 8-lead SOIC (200 mils)
      – 8-contact WSON (6mm x 5mm)
      • All devices are RoHS compliant