SI3865DDV-T1-GE3

The Si3865DDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.8 V. The Si3865DDV operates
on supply lines from 1.5 V to 12 V, and can drive loads up
to 2.8 A.