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    TLP290(GB-TP,SE

    TLP290(SE consist of photo transistor, optically coupled to two infrared
    emitting diode connected inverse parallel, and can operate directly by AC
    input current.
    The TLP290(SE is housed in the very small and thin SO4 package.
    Since TLP290(SE are guaranteed wide operating temperature (Ta=-55 to 110
    ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
    surface mounting applications such as programmable controllers and hybrid
    ICs.

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      SPECIFICATION

      • Collector-Emitter voltage : 80 V (min)
      • Current transfer ratio : 50% (min)
      Rank GB : 100% (min)
      • Isolation voltage : 3750 Vrms (min)
      • Guaranteed performance over : -55 to 110 ˚C
      • UL-recognized : UL 1577, File No.E67349
      • cUL-recognized : CSA Component Acceptance Service No.5A,
      File No.E67349
      • VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1)
      • CQC-approved : GB4943.1, GB8898 Japan and Thailand Factory