K4B4G1646E-BMMA

• JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
• VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin
933MHz fCK for 1866Mb/sec/pin
• 8 Banks
• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)
• 8-bit pre-fetch
• Burst Length: 8 , 4 with tCCD = 4 which does not allow seamless read
or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at
85C < TCASE < 95 C
• Support Industrial Temp ( -4095C )
– tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C
– tREFI 3.9us at 85 °C < TCASE ≤ 95°C
• Asynchronous Reset
• Package : 96 balls FBGA – x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free