TLP785(GB-TP6,F(C

The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with
having high isolation voltage
(AC: 5000 Vrms (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.

Categories: Isolators, Optoisolators

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SPECIFICATION

• TLP785: 7.62 mm pitch type DIP4
• TLP785F: 10.16 mm pitch type DIP4
• Collector-emitter voltage: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 5000 Vrms (min)
• UL-recognized : UL 1577, File No.E67349
• cUL-recognized :CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved : EN 60747-5-5 (Note 1)
• CQC-approved: GB4943.1, GB8898 China Factory
• SEMKO-approved : EN 62368-1