DMN26D0UFB4-7

This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.

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    SPECIFICATION

     N-Channel MOSFET
     Low On-Resistance
     Very Low Gate Threshold Voltage
     Low Input Capacitance
     Fast Switching Speed
     Low Input/Output Leakage
     Ultra-Small Surface Mount Package, 0.4mm Maximum Package
    Height
     ESD Protected Gate
     Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
     Halogen and Antimony Free. “Green” Device (Note 3)
     For automotive applications requiring specific change control
    (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please refer
    to the related automotive grade (Q-suffix) part. A listing can
    be found at
    https://www.diodes.com/products/automotive/automotiveproducts/.
     This part is qualified to JEDEC standards (as references in
    AEC-Q) for High Reliability.
    https://www.diodes.com/quality/product-definitions/