H5AN4G6NBJR-VKC

The H5AN4G4NBJR-xxC, H5AN4G8NBJR-xxC, H5AN4G6NBJR-xxC, H5AN4G8NBJR-xxI, H5AN4G6NBJR-xxI
are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory
applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer
fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses
and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes
and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.